Fine Pitch Copper CU Pillar Flip ChipCopper (Cu) pillar bump is a next generation flip chip interconnect which offers advantages in many designs while meeting current and future ROHS requirements. It is an excellent interconnect choice for applications such as Transceivers, Embedded Processors, Application Processors, Power Management, Baseband, ASICs, and SOCs where some combination of fine pitch, ROHS / Green compliance, low cost and electromigration performance are required.

 
Copper Pillar Benefits

  • Copper Cu Pillars End LineFine pitch capable down to 50 μm in-line and 40 μm / 80 μm staggered
  • Cost reduction achievable in many designs by reducing substrate layer counts
  • Superior electromigration performance for high current carrying capacity applications
  • Electrical test at wafer level prior to copper pillar bump
  • Compatible with bond pad opening / pitch and pad metallization of die designed for wire bond which enables quick time-to-market for conversion to flip chip
  • Lower cost fine pitch flip chip (FPFC) interconnect versus Au stud bump for high bump density designs
  • Lead free bump cap on copper pillar for green solutions
  • Available with and without re-passivation
  • Copper Cu Pillar Sn Ag CapQualified for advanced silicon node Low-k devices
  • Small fillet requirement for underfill enables more aggressive die-to-package design rule / smaller package footprint
  • Extreme Fine Pitch on Silicon Package down to 40 μm for Thru Silicon Via (TSV) and Chip-On-Chip (CoC)
  • Large installed capacity for turnkey fine pitch flip chip copper pillar bump, assembly and test


Copper Pillar Bump Design Rules

Copper Cu Pillar Bump Design
FEATURE DIMENSION
Cu Pillar Diameter (D) 20 -50 μm
Total Height (TH) 30 - 45 μm


 

Pad Design Guidelines

Copper Cu Pillar Pad Design

General Design Rules 60
Pitch
50
Pitch
45 / 90
Pitch
40 / 80
Pitch
30 / 60
Pitch
(A) Row to Row Pitch N/A N/A 90 80 60
(B) Bond Pad Width 30 25 22 20 TBD
(C) Trace Pitch 60 50 45 40 30

 

 

Cross Sections

Copper Cu Pillar Cross Sections

 

Electromigration Reliability Comparison of Cu Pillar with SnAg Bump

Copper Cu Pillar Comparison

The above plot shows improvement in life for Copper Cu pillar over SnAg bump for the same current / temperature condition and similar bump / UBM geometry. No failure was observed in Cu Pillar Bump even after 8000 hours of testing at the same condition.

SQB Results

Test Test Conditions Read Point SS Results
MSL3 30 / 60-192 260C 3X 77 x 12 lots PASS
T/C B -55°C / 125 °C 1000X 77 x 3 lots PASS
HAST 130°C / 85% RH 96 hrs 77 x 3 lots PASS
T&H 85°C / 85% RH 1000hrs 77 x 3 lots PASS
HTS 150°C 1000hrs 77 x 3 lots PASS

Packaging



Sign Up to Receive
Updates From Amkor
For Email Marketing you can trust